Some of your processes, including those for MEMS and nanotechnology applications, require features with relatively high aspect ratios and anisotropic profiles created in silicon. You can accomplish this using ICP-configured Deep Silicon Etching (DSE). DSE is available on our VERSALINE® platform and Mask Etcher® platform. Our CORIAL platform uses a similar process known as Deep Reactive Ion Etching (ICP-DRIE).
Our ICP-enabled process modules give you the widest process latitude, high mask selectivity, low SOI notching, and fast process switching. You also get high etch rate, superior profile control, a smoother surface, and excellent selectivity for etch depths greater than 100 µm.
Micro-Structures
DSE is routinely used for MEMS manufacturing to create deep micro-structures with high aspect ratios.
Etching Other Materials
Besides silicon, several hard-to-etch materials like glass, quartz, silicon carbide, and lithium tantalate, appeal to designers in the MEMS and packaging industries.
Control
DSE/DRIE is possible through equipment that can achieve high density of reactive species and independent control of ion current and ion energy.
Faster and Deeper
The key differentiation between DSE/DRIE and conventional ICP-RIE, is that DSE/DRIE enables faster etch rates and the formation of deep etch structures.
EXPLORE TECHNICAL PAPERS
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