Heatpulse RTP

Heatpulse™ RTP System

OUR HEATPULSE RTP IS A NEWLY RELEASED RAPID THERMAL PROCESSING (RTP) SYSTEM CAPABLE OF PROCESSING DIVERSE MATERIALS IN A VARIETY OF SUBSTRATE SIZES

Rapid thermal processing (RTP) can be used in a multitude of semiconductor process steps, such as post-implant annealing, growth of oxide and nitride films, reflow, and formation of silicides, salicides, and metal alloys. In a single-wafer chamber, wafers are rapidly heated and held at a closed-loop controlled temperature. The Heatpulse RTP system can process a variety of substrates, such as silicon, silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), quartz, and sapphire.

AG Heatpulse Legacy Systems

We support the legacy AG Heatpulse 8108 and 8800 systems with spare parts, field service, and upgrades.

  • Annealing
  • Reflow
  • Activation
  • Ohmic formation
  • Oxidation
  • Silicides and salicides
  • Accommodates substrates up to 200mm
  • Single or twin oven configurations
  • Atmospheric front end
  • O2 analyzer
  • Independent, multi-zone heater function
  • Up to 1200C
  • Pyrometry temperature measurement

The Cortex® control system provides a stable, user-friendly control interface designed for efficiency and productivity. Cortex benefits include:

  • Graphical, SEMI-standard (E-95) interface
  • Comprehensive recipe editing and process parameter data logging and charting (real-time and post-processing)
  • Automated clean and conditioning routines with configurable triggers
  • Factory automation host interface (with optional SECS/GEM license)
  • User-level access control 
  • Auto logging of alarms, jobs, calibration, and resource usage
  • Integrated with GLANCE™ data logging and visualization tool
  • Same feature-rich control system as used on high-volume production systems

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