ICP
RIE
DSE™
ME

ICP

Inductively Coupled Plasma (ICP) refers to a system configuration where plasma is generated by means of inductively coupling RF power in the source while independently controlling the ion energy bombarding the substrate via the applied bias power. This independent control allows for a wider process space to address a range of requirements from highly chemical processes such as the etching of Si or Cr to the highly physical processes such as the etching of sapphire. Plasma generation is done using 2 MHz RF power in the source while the bias is applied using 13.56 MHz RF power.

Plasma-Therm offers ICP technology on both the VERSALINE platform and the Mask Etcher Series platform and has applications in many markets.

 
 
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